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You can use the phenomenon of negative differential resistance to improve the design of some very common circuit elements. For example you can move from a classic six transistor SRAM cell to a two transistor design. It's a bit dense reading but here is a research synopsis from one group working on this in silicon/SiGe. http://www2.ece.ohio-state.edu/~berger/summ_ritd05.html


Considering that sram takes up a lot of die space in processors, wouldn't that be a Huge Deal™ for chip manufacturers?




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